MTP20N06 |
RFQ for MTP20N06 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| MTP20N06 | - | TO | - |
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features |
| • Avalanche Energy Specified• IDSS and VDS(on) Specified at Elevated Temperature• Static Parameters are the Same for both TMOS V and TMOS EFET |
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS =1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 25 |
Vdc VPK |
| Drain Current - Continuous - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
20 13 70 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
60 0.40 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS =10Vdc,PeakIL =20 Apk L =1.0mH, RG = 2.5 |
EAS |
200 |
mJ |
Thermal Res
SupplierPost a Buying Lead |
